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CNY17F SERIES
PHOTOTRANSISTOR NO BASE CONNECTION OPTOCOUPLER
FEATURES * High Current Transfer Ratio CNY17F-1, 40-80% CNY17F-2, 63-125% CNY17F-3, 100-200% CNY17F-4, 160-320% * Breakdown Voltage, 5300 VACRMS * High Collector-Emitter Voltage * VCEO=70 V * No Base Terminal Connection for Improved Common Mode Interface Immunity * Field-Effect Stable by TRIOS* * Long Term Stability * Industry Standard Dual-in-Line Package * Underwriters Lab File #E52744 V * VDE #0884, Available with Option 1
DE
Dimensions in inches (mm)
Pin One ID 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 Anode 1 Cathode 2 NC 3 6 Base 5 Collector 4 Emitter
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .130 (3.30) .150 (3.81) 18 typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .110 (2.79) .150 (3.81)
Maximum Ratings (TA=25C) Emitter Reverse Voltage ................................................ 6 V DC Forward Current .................................... 60 mA Surge Forward Current (t 10 s) ...................2.5 A Total Power Dissipation ............................ 100 mW Detector Collector-Emitter Breakdown Voltage ............. 70 V Collector Current ..........................................50 mA Collector Current (t1 ms) ......................... 100 mA Total Power Dissipation ............................ 150 mW Package Isolation Test Voltage (between emitter and detector referred to standard climate 23/50 DIN 50014) .................................... 5300 VACRMS Creepage .................................................... >7 mm Clearance................................................... >7 mm Isolation Thickness between Emitter and Detector......................................... 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part 1 ...................... 175 Isolation Resistance (V10=500 V) .................1011 Storage Temperature Range ............-55 to +150C Ambient Temperature Range ...........-55 to +100C Junction Temperature ................................... 100C Soldering Temperature (max. 10 s, dip soldering: distance to seating plane 1.5 mm) .......... 260C *TRIOS--TRansparent IOn Shield
DESCRIPTION The CNY17F is an optocoupler consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package. The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. In contrast to the CNY17 Series, the base terminal of the F type is not connected, resulting in a substantially improved common-mode interference immunity. Characteristics (TA=25C)
Symbol Emitter Forward Voltage Breakdown Voltage Reverse Current Capacitance Thermal Resistance Detector Capacitance Thermal Resistance Package Saturation Voltage, Collector-Emitter Coupling Capacitance VCEsat CC 0.25 (0.4) 0.6 V pF IF=10 mA IC=2.5 mA CCE RthJA 5.2 500 pF K/W VCE=5 V, f=1 MHz VF VBR IR CO RthJA 1.25 (1.65) 6 0.01 (10) 25 750 V V A pF K/W IF=60mA IR=10A VR=6 V VR=0 V, f=1 MHz Unit Condition
5-1
Current Transfer Ratio (IC/IF at VCE=5 V, 25C) and Collector-Emitter Leakage Current by dash number
-1 IC/IF at VCE=5 V (IF=10 mA) IC/IF at VCE=5 V (IF=1 mA) Collector-Emitter Leakage Current (VCE=10 V) (ICEO) 40-80 30 (>13) 2 ( 50) -2 63-125 45 (>22) 2 ( 50) -3 100-200 70 (>34) 5 ( 100) -4 160-320 90 (>56) 5 ( 100) Unit % % nA
Figure 3. Current transfer ratio versus diode current (TA=-25C, VCE=5 V) IC/IF=f (IF)
Figure 1. Linear operation (without saturation)
IF RL=75 IC VCC=5 V
47
IF=10 mA, VCC=5 V, TA=25C
Load Resistance Turn-On Time Rise Time Turn-Off Time Fall Time Cut-Off Frequency RL tON tR tOFF tf fCO 75 3.0 2.0 2.3 2.0 250 s s s s kHz
Figure 4. Current transfer ratio versus diode current (TA=0C, VCE=5 V) IC/IF=f (IF)
Figure 2. Switching operation (with saturation)
IF 1 K VCC=5 V
47
-1 (IF=20 mA) Turn-On Time Rise Time Turn-Off Time Fall Time tON tR tOFF tF 3.0 2.0 18 11
-2 and -3 (IF=10 mA) 4.2 3.0 23 14
-4 (IF=5 mA) 6.0 4.6 25 15 s s s s
Figure 5. Current transfer ratio versus diode current (TA=25C, VCE=5 V) IC/IF=f (IF)
CNY17F
5-2
Figure 6. Current transfer ratio versus diode current (TA=50C) VCE=5 V
Figure 9. Output characteristics CNY17F-2, -3 (TA=25C) IC=f(VCE)
Figure 12. Saturation voltage current and modulation CNY17F-1 VCEsat=f (IC) (TA=25C)
Figure 7. Current transfer ratio versus diode current (TA=75C) VCE=5 V
Figure 10. Forward voltage VF=f(IF)
Figure 13. Saturation voltage versus collector current and modulation depth CNY17F-2 VCEsat=f (IC) (TA=25C)
Figure 8. Current transfer ratio versus temperature (IF=10 mA, VCE=5 V) IC/IF=f (T)
Figure 11. Collector emitter off-state current ICEO=f(V,T) (TA=75C, IF=0)
Figure 14. Saturation voltage versus collector current and modulation depth CNY17F-3 VCEsat=f (IC) (TA=25C)
CNY17F
5-3
Figure 15. Saturation voltage versus collector current and modulation depth CNY17F-4 VCEsat=f (IC) (TA=25C)
Figure 17. Permissible power dissipation transistor and diode Ptot=f(TA)
Figure 19. Transistor capacitance C=f(VO)(TA=25C, f=1 MHz)
Figure 16. Permissible pulse load D=parameter, TA=25C, IF=f(tp)
Figure 18. Permissible forward current diode IF=f(TA)
CNY17F
5-4

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